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| SEMiX453GD176HDc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE 20 V VCES 1700 V VGES tpsc Tj Inverse diode IF Tc = 25 C Tc = 80 C Tj = 125 C Tj = 150 C Tc = 25 C Tc = 80 C 1700 444 315 300 600 -20 ... 20 10 -55 ... 150 545 365 300 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 600 2900 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R) 33c Trench IGBT Modules SEMiX453GD176HDc Tj = 150 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* * AC inverter drives * UPS * Electronic welders Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 300 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V Tj = 25 C Tj = 125 C 5.2 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 26.4 1.10 0.88 2799 2.50 Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C 335 70 215 990 150 125 0.071 2 2.45 1 0.9 3.3 5.2 5.8 0.1 2.45 2.9 1.2 1.1 4.2 6.0 6.4 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1700 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 1200 V IC = 300 A RG on = 4.3 RG off = 4.3 GD (c) by SEMIKRON Rev. 10 - 16.12.2009 1 SEMiX453GD176HDc Characteristics Symbol Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C rF Tj = 25 C Tj = 125 C IF = 300 A Tj = 125 C di/dtoff = 4700 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 1200 V per diode 0.9 0.7 1.3 1.8 min. typ. 1.5 1.4 1.1 0.9 1.3 1.8 350 115 65 max. 1.70 1.6 1.3 1.1 1.3 1.8 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 SEMiX(R) 33c Trench IGBT Modules SEMiX453GD176HDc IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.11 20 K/W nH m m K/W res., terminal-chip per module to heat sink (M5) TC = 25 C TC = 125 C 3 to terminals (M6) 2.5 0.7 1 0.014 5 5 900 Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Rth(c-s) Ms Mt w Nm Nm Nm g K Typical Applications* * AC inverter drives * UPS * Electronic welders Temperatur Sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% GD 2 Rev. 10 - 16.12.2009 (c) by SEMIKRON SEMiX453GD176HDc Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 10 - 16.12.2009 3 SEMiX453GD176HDc Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 10 - 16.12.2009 (c) by SEMIKRON SEMiX453GD176HDc SEMiX 33c pinout * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. (c) by SEMIKRON Rev. 10 - 16.12.2009 5 |
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